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| STB100NF04_07 Datasheet, PDF (4/17 Pages) STMicroelectronics – N-channel 40V - 0.0043ohm - 120A - TO-220 - D2PAK STripFET TM II Power MOSFET | |||
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Electrical characteristics
2
Electrical characteristics
STB100NF04 - STP100NF04
(TCASE=25°C unless otherwise specified)
Table 3. On/off
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source Breakdown
Voltage
ID=250µA, VGS=0
IDSS
Zero Gate Voltage Drain VDS=Max Rating
Current (VGS=0)
VDS=Max Rating Tc=125°C
IGSS
Gate-body Leakage
Current (VDS=0)
VGS=±20V
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA
RDS(on)
Static Drain-source On
Resistance
VGS=10V, ID=50A
Min. Typ. Max. Unit
40
V
1 µA
10 µA
±100 nA
2
4
V
0.0043 0.0046 â¦
Table 4. Dynamic
Symbol
Parameter
Test conditions
Min Typ. Max. Unit
gfs
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Forward Transconductance
VDS=15V, ID=50A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=25V, f=1MHz,VGS=0
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD=32V, ID=120A
VGS=10V
Turn-on Delay Time
Rise time
Turn-off delay Time
Fall Time
VDD=20V, ID=60A
RG=4.7â¦, VGS=10V
(see Figure 21)
150
S
5100
pF
1300
pF
160
pF
110 150 nC
35
nC
70
nC
35
ns
220
ns
80
ns
50
ns
4/17
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