STB100NF04_07 Datasheet, PDF (5/17 Pages) STMicroelectronics – N-channel 40V - 0.0043ohm - 120A - TO-220 - D2PAK STripFET TM II Power MOSFET

STB100NF04 - STP100NF04
Electrical characteristics
Table 5. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
I_SD
I_SDM(1)
V_SD(2)
Source-drain Current
Source-drain Current (pulsed)
Forward on Voltage
I_SD=120A, V_GS=0
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse recovery Current
I_SD=120A, V_DD=20V,
di/dt=100A/µs, Tj=150°C
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
120 A
480 A
1.3 V
75
ns
185
nC
5
A
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