PD55015-E Datasheet, PDF (9/27 Pages) STMicroelectronics – RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

PD55015-E, PD55015S-E
Figure 16. Drain efficiency vs.
output power
Typical performance
Figure 17. Return loss vs. output power
60
50
520 MHz
480 MHz
40
500 MHz
30
20
10
Vdd = 12.5 V
Idq = 150 mA
0
0
2
4
6
8 10 12 14 16 18
Pout, OUTPUT POWER (W)
0
-10
-20
480 MHz
520 MHz
500 MHz
-30
Vdd = 12.5 V
Idq = 150 mA
-40
0
2
4
6
8 10 12 14 16 18
Pout, OUTPUT POWER (W)
PD55015S
Figure 18. Output power vs.
bias current
Figure 19. Drain efficiency vs. bias current
22
20
18
16
14
12
0
70
60
480 MHz
500 MHz
520 MHz
50
Pin = .5 W
Vdd = 12.5 V
200
400
600
800
Idq, BIAS CURRENT (mA)
1000
40
30
0
500 MHz
520 MHz
480 MHz
Pin = .5 W
Vdd = 12.5 V
200
400
600
800
Idq, BIAS CURRENT (mA)
1000
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