PD55015-E Datasheet, PDF (6/27 Pages) STMicroelectronics – RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Typical performance
4
Typical performance
PD55015-E, PD55015S-E
Figure 2.
C (pF)
1000
Capacitance vs drain voltage
100
C iss
Coss
10
1
0
f=1 M Hz
5
10
15
20
VDS (V)
C rss
25
30
Figure 4. Gate-source voltage vs
case temperature
Figure 3. Drain current vs gate voltage
4
3.5
3
2.5
2
1.5
1
0.5
0
2.5
VDS = 10 V
3
3.5
4
4.5
5
Vgs, GATE-SOURCE VOLTAGE (V)
1.04
1.02
1
0.98
0.96
-25
VDS = 10 V
ID = 3A
ID = 2A
ID = 1.5 A
ID = 1A
ID = .25 A
0
25
50
75
Tc, CASE TEMPERATURE (°C)
PD55015
Figure 5. Output power vs input power
Figure 6. Power gain vs output power
18
16
14
12
10
8
6
4
2
0
0
480 MHz
500 MHz
520 MHz
VDD = 12..5 V
IDQ = 150 mA
0.2
0.4
0.6
0.8
1
Pin, INPUT POWER (W)
18
16
480 MHz
14
500 MHz
520 MHz
12
Vdd = 12.5 V
Idq = 150 mA
10
0
2
4
6
8 10 12 14 16 18
Pout, OUTPUT POWER (W)
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