PD55015-E Datasheet, PDF (7/27 Pages) STMicroelectronics – RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

PD55015-E, PD55015S-E
Typical performance
Figure 7. Drain efficiency vs.
output power
Figure 8. Input return loss vs. output power
60
480 MHz
50
520 MHz
500 MHz
40
30
20
10
Vdd = 12.5 V
Idq = 150 mA
0
0
2
4
6
8 10 12 14 16 18
Pout, OUTPUT POWER (W)
0
-10
-20
-30
-40
0
480 MHz
500 MHz
520 MHz
Vdd = 12.5 V
Idq = 150 mA
2
4
6
8 10 12 14 16 18
Pout, OUTPUT POWER (W)
Figure 9. Output power vs.
bias current
Figure 10. Drain efficiency vs. bias current
22
20
18
16
14
12
0
480 MHz
500 MHz
520 MHz
Pin = .7 W
Vdd = 12.5 V
200
400
600
800
Idq, BIAS CURRENT (mA)
1000
70
60
50
40
30
0
520 MHz
480 MHz
500 MHz
Pin = .7 W
Vdd = 12.5 V
200
400
600
800
Idq, BIAS CURRENT (mA)
1000
Figure 11. Output power vs.
drain voltage
Figure 12. Drain efficiency vs. drain voltage
25
20
480 MHz
520 MHz
15
500 MHz
10
5
Idq = 150mA
Pin = .7 W
0
7 8 9 10 11 12 13 14 15 16 17
VDS, DRAIN-SOURCE VOLTAGE (V)
70
480 MHz
60
500 MHz
520 MHz
50
40
IDQ = 150mA
Pin = .7 W
30
7 8 9 10 11 12 13 14 15 16 17
VDS, DRAIN-SOURCE VOLTAGE (V)
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