PD55015-E Datasheet, PDF (10/27 Pages) STMicroelectronics – RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Typical performance
Figure 20. Output power vs.
drain voltage
PD55015-E, PD55015S-E
Figure 21. Drain efficiency vs. drain voltage
25
20
480 MHz
520 MHz
15
500 MHz
10
5
Idq = 150mA
Pin = .5 W
0
7 8 9 10 11 12 13 14 15 16 17
VDS, DRAIN-SOURCE VOLTAGE (V)
70
60
500 MHz
480 MHz
520 MHz
50
40
Idq = 150mA
Pin = .5 W
30
7 8 9 10 11 12 13 14 15 16 17
VDS, DRAIN-SOURCE VOLTAGE (V)
PD55015S
Figure 22. Output power vs.
gate bias voltage
Figure 23. Power gain vs. output power
20
15
10
5
0
0
Gp (dB)
16
480 MHz
15
520 MHz
14
500 MHz
13
12
11
VDD = 12.5 V
Pin = .5 W
0.5
1
1.5
2
2.5
3
VGS, GATE BIAS VOLTAGE (V)
10
3.5
0
876 MHz
915 MHz
900 MHz
Vdd = 12.5V
Idq = 150mA
5
10
15
20
Pout (W)
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