STDLED656 Datasheet, PDF (8/22 Pages) STMicroelectronics – Gate charge minimized

Electrical characteristics
STDLED656, STFILED656, STPLED656, STULED656
Figure 14. Normalized BV_DSS vs temperature
Figure 15. Source-drain diode forward
characteristics
BVDSS
(norm)
1.10
1.05
ID=1mA
AM12970v1
VSD
(V)
1.0
0.8
0.6
AM12971v1
TJ=-50°C
TJ=25°C
TJ=150°C
1.00
0.4
0.95
t(s) 0.90
c -75 -25
25
75 125 TJ(°C)
du _{Figure 16. Maximum avalanche energy vs}
ro temperature
P _EAS
te ^(mJ)
le 100
ID=5.4 A
VDD=50 V
AM12972v1
bso ⁸⁰
- ^O 60
t(s) ⁴⁰
uc ₂₀
rod 0
Obsolete ^{P 0 20 40 60 80 100 120 TJ(°C)}
0.2
0
0 1 2 3 4 5 6 ISD(A)
8/22
DocID024429 Rev 1