STDLED656 Datasheet, PDF (1/22 Pages) STMicroelectronics – Gate charge minimized

STDLED656, STFILED656,
STPLED656, STULED656
N-channel 650 V, 1.1 Ω typ., 6.0 A Power MOSFET
in DPAK, I²PAKFP, TO-220 and IPAK packages
Datasheet − preliminary data
Features
TAB
Order codes V_DS
R_DS(on)
max
I_D
P_TOT
3
1
DPAK
t(s) _TAB
roduc ³
2
1
te ^{P TO-220}
123
I²PAKFP
TAB
3
2
1
IPAK
ole Figure 1. Internal schematic diagram
bs D(2,TAB)
ct(s) ^{- O} _G(1)
lete ^Produ S(3)
Obso ^AM01476v1
STDLED656
STFILED656
STPLED656
STULED656
650 V
1.3 Ω
6.0 A
70 W
25 W
70 W
• 100% avalanche tested
• Extremely high dv/dt capability
• Gate charge minimized
• Very low intrinsic capacitance
• Improved diode reverse recovery
characteristics
• Zener-protected
Applications
• LED lighting applications
Description
These Power MOSFETs boast extremely low on-
resistance and very good dv/dt capability,
rendering them suitable for buck-boost and
flyback topologies.
Order codes
STDLED656
STFILED656
STPLED656
STULED656
Table 1. Device summary
Marking
Package
LED656
DPAK
I²PAKFP (TO-281)
TO-220
IPAK
Packaging
Tape and reel
Tube
March 2013
DocID024429 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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