STDLED656 Datasheet, PDF (3/22 Pages) STMicroelectronics – Gate charge minimized

STDLED656, STFILED656, STPLED656, STULED656
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
DPAK, TO-220
IPAK
I²PAKFP
Unit
V_DS Drain- source voltage
650
V
V_GS Gate- source voltage
±30
V
I_D
t(s) ^ID
c ^IDM ⁽²⁾
u _PTOT
rod _IAR
te ^P E_AS
sole ^ESD
Ob ^dv/dt(3)
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Avalanche current, repetitive or not-
repetitive (pulse width limited by T_J max)
Single pulse avalanche energy
(starting T_J = 25 °C, I_D = I_AR, V_DD = 50 V)
Gate-source human body model (C=100
pF, R=1.5 kΩ)
Peak diode recovery voltage slope
- _VISO
t(s) ^Tstg
c T_J
Insulation withstand voltage (AC)
Storage temperature
Operating junction temperature
u _{1. Limited only by maximum temperature allowed}
rod ^{2. Pulse width limited by safe operating area}
P ^{3. I}SD ^{≤ 5.4 A, di/dt ≤ 400 A/µs, V}DD ^{= 80% V}(BR)DSS^.
6.0
3.3
24.0
30
6.0⁽¹⁾
A
3.3⁽¹⁾
A
24.0⁽¹⁾
A
110
W
5.4
A
2.5
kV
12
2500
- 55 to 150
150
V/ns
V
°C
°C
olete^{Table 3. Thermal data}
Obs ^Symbol
Parameter
Value
Unit
DPAK I²PAKFP TO-220 IPAK
R_thj-case Thermal resistance junction-case max.
R_thj-amb Thermal resistance junction-ambient max
R_thj-pcb Thermal resistance junction-pcb max.
50
4.17
62.5
-
1.14 °C/W
-
100 °C/W
-
°C/W
DocID024429 Rev 1
3/22