STDLED656 Datasheet, PDF (4/22 Pages) STMicroelectronics – Gate charge minimized

Electrical characteristics
STDLED656, STFILED656, STPLED656, STULED656
2
Electrical characteristics
(Tcase =25 °C unless otherwise specified)
Table 4. On /off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V_(BR)DSS
Drain-source
breakdown voltage
I_D = 1 mA, V_GS = 0
650
V
I_DSS
t(s) ^IGSS
c _VGS(th)
rodu ^RDS(on)
Zero gate voltage
V_DS = 650 V
drain current (V_GS = 0) V_DS = 650 V, T_C=125 °C
Gate-body leakage
current (V_DS = 0)
V_GS = ± 20 V; V_DS=0
Gate threshold voltage V_DS = V_GS, I_D = 50 µA
Static drain-source on
resistance
V_GS = 10 V, I_D = 2.7 A
0.8 µA
50 µA
±9 µA
3
3.6 4.5 V
1.1 1.3 Ω
te ^{P Table 5. Dynamic}
le _Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
bso C_iss
O ^C_oss
- _Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS = 100 V, f = 1 MHz,
V_GS = 0
895
pF
-
67
- pF
12.5
pF
t(s) ^Equivalent
c ^{Coss eq. (1) capacitance energy}
u ^related
V_DS = 0 to 520 V, V_GS = 0
-
27
- pF
rod ^Rg
Gate input resistance f=1 MHz open drain
P ^Qg
Total gate charge
V_DD = 500 V, I_D = 5.4 A,
Q_gs Gate-source charge V_GS = 10 V
te_{Qgd Gate-drain charge}
(see Figure 17)
-
3.5
-
Ω
34
nC
-
4
- nC
21
nC
ole^{1. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as}
Obs ^{Coss when VDS increases from 0 to 80% VDSS}
Table 6. Switching times
Symbol
Parameter
Test conditions
Min. Typ. Max Unit
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
V_DD = 325 V, I_D = 2.7 A,
R_G = 4.7 Ω, V_GS = 10 V
(see Figure 17)
14
10
-
44
24
ns
ns
-
ns
ns
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