STD9NM40N Datasheet, PDF (8/18 Pages) STMicroelectronics – N-channel 400 V, 0.73 Ω typ., 5.6 A MDmesh™ II Power MOSFET in DPAK and TO-220 packages

Electrical characteristics
STD9NM40N, STP9NM40N
Figure 14. Normalized V_DS vs temperature
Figure 15. Source-drain diode forward
characteristics
VDS
(norm)
1.10
ID=1mA
AM09028v1
VSD (V)
1.3
AM16310v1
TJ=-50°C
1.08
1.06
1.04
1.02
1.00
0.98
0.96
1.2
1.1
TJ=25°C
1.0
0.9
TJ=150°C
0.8
0.7
0.94
0.92
-50 -25 0 25 50 75 100 TJ(°C)
0.6
0.5
0
1
2
3
4
5 ISD(A)
8/18
Doc ID 023762 Rev 2