STD9NM40N Datasheet, PDF (7/18 Pages) STMicroelectronics – N-channel 400 V, 0.73 Ω typ., 5.6 A MDmesh™ II Power MOSFET in DPAK and TO-220 packages

STD9NM40N, STP9NM40N
Electrical characteristics
Figure 8. Static drain-source on-resistance Figure 9. Gate charge vs gate-source voltage
RDS(on)
(Ω)
0.077
0.076
0.075
0.074
0.073
VGS=10V
AM00891v1
VGS
(V) VDS
12
10
8
6
VDD=320V
ID=5.6A
AM16306v1
VDS (V)
300
250
200
150
0.072
4
100
0.071
2
50
0.070
0
1
2
3
4
5 ID(A)
0
0
0 2 4 6 8 10 12 14 Qg(nC)
Figure 10. Capacitance variations
C
(pF)
1000
100
10
1
0.1
1
10
100
Figure 11. Output capacitance stored energy
AM16308v1
Eoss
(µJ)
1.6
AM16309v1
1.4
Ciss
1.2
1.0
0.8
Coss
Crss
VDS(V)
0.6
0.4
0.2
0
0 50 100 150 200 250 300 350 VDS(V)
Figure 12. Normalized gate threshold voltage
vs temperature
VGS(th)
(norm)
ID = 250 µA
AM07923v1
Figure 13. Normalized on resistance vs
temperature
RDS(on)
(norm)
2.1
ID = 2.5 A
AM07924v1
1.00
1.7
0.90
1.3
0.80
0.70
-50 -25 0 25 50 75 100 TJ(°C)
0.9
0.5
-50 -25 0 25 50 75 100 TJ(°C)
Doc ID 023762 Rev 2
7/18