STD9NM40N Datasheet, PDF (1/18 Pages) STMicroelectronics – N-channel 400 V, 0.73 Ω typ., 5.6 A MDmesh™ II Power MOSFET in DPAK and TO-220 packages

STD9NM40N, STP9NM40N
N-channel 400 V, 0.73 Ω typ., 5.6 A MDmesh™ II Power MOSFET
in DPAK and TO-220 packages
Datasheet — production data
Features
Order codes
STD9NM40N
STP9NM40N
V_DSS@T_JMAX R_DS(on)max. I_D
450 V
< 0.79 Ω 5.6 A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Applications
■ Switching applications
Description
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
TAB
3
1
DPAK
TAB
3
2
1
TO-220
Figure 1. Internal schematic diagram
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3
!-V
Table 1. Device summary
Order codes
STD9NM40N
STP9NM40N
Marking
9NM40N
Packages
DPAK
TO-220
Packaging
Tape and reel
Tube
December 2012
This is information on a product in full production.
Doc ID 023762 Rev 2
1/18
www.st.com
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