STD9NM40N Datasheet, PDF (3/18 Pages) STMicroelectronics – N-channel 400 V, 0.73 Ω typ., 5.6 A MDmesh™ II Power MOSFET in DPAK and TO-220 packages

STD9NM40N, STP9NM40N
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_DS
V_GS
I_D
I_D
I_DM(1)
P_TOT
dv/dt ⁽²⁾
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Peak diode recovery voltage slope
T_stg Storage temperature
T_j Max. operating junction temperature
1. Pulse width limited by safe operating area.
2. I_SD ≤ 5.6 A, di/dt ≤ 400 A/µs, V_Peak < V_(BR)DSS, V_DS= 80% V_(BR)DSS
Value
400
± 25
5.6
4.3
22.4
60
40
- 55 to 150
150
Table 3. Thermal data
Symbol
Parameter
R_thj-case Thermal resistance junction-case max
R_thj-pcb Thermal resistance junction-pcb max
Value
DPAK
TO-220
2.08
50
Unit
V
V
A
A
W
V/ns
°C
°C
Unit
°C/W
°C/W
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
I_AR
Avalanche current, repetitive or not-repetitive
(pulse width limited by T_j max)
2
A
Single pulse avalanche energy
E_{AS (starting Tj = 25°C, ID = IAR, VDD = 50 V)}
140
mJ
Doc ID 023762 Rev 2
3/18