STD9N60M2 Datasheet, PDF (8/21 Pages) STMicroelectronics – Extremely low gate charge

Electrical characteristics
STD9N60M2, STP9N60M2, STU9N60M2
Figure 14. Source-drain diode forward
characteristics
Figure 15. Normalized V_DS vs temperature
VSD
(V)
1.4
1.2
1.0
AM15873v1
TJ=-50°C
VDS
(norm)
1.11
1.09
1.07
1.05
ID=1mA
AM15867v1
0.8
0.6
TJ=150°C
TJ=25°C
0.4
0.2
0
0
1
23
4
5 ISD(A)
1.03
1.01
0.99
0.97
0.95
0.93
-50 -25 0 25 50 75 100 125 TJ(°C)
8/21
DocID024399 Rev 2