STD9N60M2 Datasheet, PDF (7/21 Pages) STMicroelectronics – Extremely low gate charge

STD9N60M2, STP9N60M2, STU9N60M2
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on-resistance
VGS
(V)
12 ^VDS
10
8
6
4
ID=5.5A
VDD=480V
AM15869v1
VDS
(V)
500
400
300
200
RDS(on)
(Ω)
0.760
0.750
0.740
0.730
0.720
0.710
VGS=10A
AM15868v1
2
100
0.700
0
0
0
2
4
6
8
10 Qg(nC)
0.690
0
1
23
4
5 ID(A)
Figure 10. Capacitance variations
C
(pF)
1000
100
Figure 11. Output capacitance stored energy
AM15870v1
Eoss
(µJ)
AM15874v1
Ciss
2
10
Coss
1
1
Crss
0.1
0.1
1
10
100 VDS(V)
0
0 100 200 300 400 500 600 VDS(V)
Figure 12. Normalized gate threshold voltage Figure 13. Normalized on-resistance vs
vs temperature
temperature
VGS(th)
(norm)
1.1
1.0
0.9
ID=250µA
AM15871v1
RDS(on)
(norm)
2.5
2.3
2.1
1.9
1.7
1.5
1.3
ID=3 A
VGS=10 V
AM15872v1
0.8
0.7
-50 -25 0 25 50 75 100 125 TJ(°C)
1.1
0.9
0.7
0.5
-50 -25 0
25 50 75 100 125 TJ(°C)
DocID024399 Rev 2
7/21