STD9N60M2 Datasheet, PDF (1/21 Pages) STMicroelectronics – Extremely low gate charge

STD9N60M2, STP9N60M2,
STU9N60M2
N-channel 600 V, 0.72 Ω typ., 5.5 A MDmesh II Plus™ low Q_g
Power MOSFET in DPAK, TO-220 and IPAK packages
Datasheet - production data
TAB
3
1
DPAK
TAB
TAB
3
2
1
TO-220
3
2
1
IPAK
Features
Order codes
V_DS @
T_Jmax
R_DS(on)
max
I_D
STD9N60M2
STP9N60M2
STU9N60M2
650 V 0.78 Ω 5.5 A
• Extremely low gate charge
• Lower R_DS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
Figure 1. Internal schematic diagram
, TAB
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Qg. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
AM15572v1
Order codes
STD9N60M2
STP9N60M2
STU9N60M2
Table 1. Device summary
Marking
Package
9N60M2
DPAK
TO-220
IPAK
Packaging
Tape and reel
Tube
Tube
May 2013
This is information on a product in full production.
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