STD9N60M2 Datasheet, PDF (3/21 Pages) STMicroelectronics – Extremely low gate charge

STD9N60M2, STP9N60M2, STU9N60M2
1
Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
Value
V_GS
I_D
I_D
(1)
I_DM
P_TOT
(2)
dv/dt
(3)
dv/dt
Gate-source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
T_stg Storage temperature
T_j
Max. operating junction temperature
1. Pulse width limited by safe operating area..
2. I_SD ≤ 5.5 A, di/dt ≤ 400 A/μs; V_{DS peak} < V_(BR)DSS, V_DD=400 V
3. V_DS ≤ 480 V
± 25
5.5
3.6
22
60
15
50
- 55 to 150
150
Unit
V
A
A
A
W
V/ns
°C
Symbol
Table 3. Thermal data
Parameter
Value
Unit
DPAK TO-220 IPAK
R_thj-case Thermal resistance junction-case max
(1)
R_thj-pcb Thermal resistance junction-pcb max
R_thj-amb Thermal resistance junction-ambient max
1. When mounted on 1 inch² FR-4, 2 Oz copper board
2.08
°C/W
50
°C/W
100 °C/W
Symbol
Table 4. Avalanche characteristics
Parameter
Value
Unit
Avalanche current, repetetive or not repetetive
I_AR
(pulse width limited by T_jmax )
Single pulse avalanche energy (starting T_j=25°C,
E_AS
I_D= I_AR; V_DD=50)
2
A
105
mJ
DocID024399 Rev 2
3/21