STD70N10F4 Datasheet, PDF (8/18 Pages) STMicroelectronics – N-channel 100 V, 0.015 Ω, 60 A, STripFET™ DeepGATE™ Power MOSFET in TO-220, DPAK, TO-247, D2PAK

Electrical characteristics
Figure 14. Source-drain diode forward
characteristics
VSD
(V)
TJ=-55°C
0.9
AM03175v1
0.8
TJ=25°C
0.7
0.6
TJ=175°C
0.5
0.4
0 5 10 15 20 25 30 ISD(A)
STB/D/P/W70N10F4
8/18
Doc ID 15207 Rev 3