STD70N10F4 Datasheet, PDF (5/18 Pages) STMicroelectronics – N-channel 100 V, 0.015 Ω, 60 A, STripFET™ DeepGATE™ Power MOSFET in TO-220, DPAK, TO-247, D2PAK

STB/D/P/W70N10F4
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max Unit
I_SD Source-drain current
-
I_SDM ⁽¹⁾ Source-drain current (pulsed)
V_SD ⁽²⁾ Forward on voltage
I_SD = 60 A, V_GS = 0
-
60 A
240 A
1.5 V
t_rr
Reverse recovery time
I_SD = 60 A, V_DD = 25 V
di/dt = 100 A/µs,
80
ns
Q_rr
I_RRM
Reverse recovery charge
Reverse recovery current
T_j = 150 °C
(see Figure 17)
- 280
nC
6.7
A
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Doc ID 15207 Rev 3
5/18