STD70N10F4 Datasheet, PDF (3/18 Pages) STMicroelectronics – N-channel 100 V, 0.015 Ω, 60 A, STripFET™ DeepGATE™ Power MOSFET in TO-220, DPAK, TO-247, D2PAK

STB/D/P/W70N10F4
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_DS Drain-source voltage (V_GS = 0)
V_GS Gate-source voltage
I_D
Drain current (continuous) at T_C = 25 °C
I_D
I_DM ⁽¹⁾
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
P_TOT Total dissipation at T_C = 25 °C
Derating factor
E_AS ⁽²⁾ Single pulse avalanche energy
T_stg Storage temperature
T_j
Max. operating junction temperature
1. Pulse width limited by safe operating area
2. Starting T_j = 25 °C, I_D= 32.5 A, V_DD= 45 V
Value
TO-220, TO-247,
D²PAK
100
± 20
65
46
260
150
1
120
DPAK
60
43
240
125
0.83
– 55 to 175
Unit
V
V
A
A
A
W
W/°C
mJ
°C
Table 3. Thermal data
Symbol
Parameter
R_thj-case Thermal resistance junction-case max
R_thj-a Thermal resistance junction-ambient max
T_l
Maximum lead temperature for soldering
purpose
1. When mounted on FR-4 board of 1 inch², 2 oz Cu
Value
TO-220, TO-247,
D²PAK
1
62.5
DPAK
1.2
50 ⁽¹⁾
300
Unit
°C/W
°C/W
°C
Doc ID 15207 Rev 3
3/18