STD70N10F4 Datasheet, PDF (4/18 Pages) STMicroelectronics – N-channel 100 V, 0.015 Ω, 60 A, STripFET™ DeepGATE™ Power MOSFET in TO-220, DPAK, TO-247, D2PAK

Electrical characteristics
2
Electrical characteristics
STB/D/P/W70N10F4
(T_CASE = 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Drain-source
V_{(BR)DSS Breakdown voltage}
Zero gate voltage
I_{DSS Drain current (VGS = 0)}
I_GSS
V_GS(th)
R_DS(on)
Gate-body leakage
current (V_DS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
I_D = 250 µA, V_GS = 0
100
V
V_DS = max rating
V_DS = max rating,T_C=125 °C
1 µA
100 µA
V_GS = ± 20 V
100 nA
V_DS = V_GS, I_D = 250 µA
2
4
V
V_GS = 10 V, I_D = 30 A
0.015 0.0195 Ω
Table 5.
Symbol
Dynamic
Parameter
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Table 6.
Symbol
Switching times
Parameter
t_d(on)
t_r
Turn-on delay time
Rise time
t_d(off)
t_f
Turn-off-delay time
Fall time
Test conditions
V_DS = 25 V, f = 1 MHz,
V_GS = 0
V_DD = 80 V, I_D = 65 A,
V_GS = 10 V
(see Figure 16)
Min. Typ. Max. Unit
5800
pF
-
300
-
pF
190
pF
85
nC
-
20
- nC
25
nC
Test conditions
V_DD = 50 V, I_D = 30 A
R_G = 4.7 Ω V_GS = 10 V
(see Figure 15)
V_DD = 50 V, I_D = 30 A,
R_G = 4.7 Ω, V_GS = 10 V
(see Figure 15)
Min. Typ. Max. Unit
30
ns
-
-
20
ns
65
ns
-
-
20
ns
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Doc ID 15207 Rev 3