STB7N52K3_09 Datasheet, PDF (8/18 Pages) STMicroelectronics – N-channel 525 V, 0.84 OHM, 6.2 A, D2PAK, DPAK, TO-220FP, TO-220 SuperMESH3 Power MOSFET

Electrical characteristics
STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3
Figure 14. Gate charge vs gate-source voltage Figure 15. Normalized on resistance vs
temperature
VGS
(V)
12
VDS VDD=420V
ID=6A
10
8
6
4
2
AM05406v1
VGS
400
350
300
250
200
150
100
50
RDS(on)
(norm)
2.5
2.0
1.5
1.0
0.5
AM05408v1
0
0
0 5 10 15 20 25 30 35 Qg(nC)
0.0
-50 -25 0 25 50 75 100 125 150 TJ(°C)
Figure 16. Normalized gate threshold voltage Figure 17. Maximum avalanche energy vs
vs temperature
temperature
VGS(th)
(norm)
1.10
1.00
AM05407v1
0.90
0.80
0.70
-50 -25 0 25 50 75 100 125 150 TJ(°C)
EAS
(mJ)
100
90
80
70
60
50
40
30
20
10
0
0
ID=6.2 A
VDD=50 V
AM05409v1
20 40 60 80 100 120 140 TJ(°C)
Figure 18. Source-drain diode forward
characteristics
VSD
(V)
0.9
TJ=-50°C
AM05410v1
0.8
TJ=25°C
0.7
0.6
0.5
TJ=150°C
0.4
0.3
0 1 2 3 4 5 6 7 8 ISD(A)
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Doc ID 14896 Rev 2