STB7N52K3_09 Datasheet, PDF (3/18 Pages) STMicroelectronics – N-channel 525 V, 0.84 OHM, 6.2 A, D2PAK, DPAK, TO-220FP, TO-220 SuperMESH3 Power MOSFET

STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220 DPAK D²PAK TO-220FP
V_DS Drain-source voltage (V_GS = 0)
V_GS Gate- source voltage
I_D Drain current (continuous) at T_C = 25 °C
I_D
I_DM ⁽²⁾
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
P_TOT Total dissipation at T_C = 25 °C
I_AR
Avalanche current, repetitive or not-
repetitive (pulse width limited by T_j max)
Single pulse avalanche energy
E_{AS (starting Tj = 25°C, ID = IAR, VDD = 50V)}
Gate source ESD(HBM-C = 100 pF,
V_{ESD(G-S) R = 1.5 kΩ)}
dv/dt ⁽³⁾ Peak diode recovery voltage slope
V_ISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t = 1 s; TC = 25 °C)
T_stg Storage temperature
T_j Max. operating junction temperature
1. Limited by package
2. Pulse width limited by safe operating area
3. I_SD ≤ 6.3 A, di/dt = TBD, V_DD = 80% V_(BR)DSS.
525
± 30
6.2
4.5
24.8
90
6.2
V
V
6.2 ⁽¹⁾
A
4.5 ⁽¹⁾
A
24.8 ⁽¹⁾
A
25
W
A
100
mJ
2500
12
V
V/ns
2500
V
-55 to 150
°C
150
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
TO-220 DPAK D²PAK TO-220FP
R_thj-case Thermal resistance junction-case max
R_thj-pcb Thermal resistance junction-pcb max
R_thj-amb Thermal resistance junction-ambient max
T_l
Maximum lead temperature for soldering
purpose
62.5
1.39
50
30
300
5
°C/W
°C/W
62.5 °C/W
°C
Doc ID 14896 Rev 2
3/18