STB7N52K3_09 Datasheet, PDF (1/18 Pages) STMicroelectronics – N-channel 525 V, 0.84 OHM, 6.2 A, D2PAK, DPAK, TO-220FP, TO-220 SuperMESH3 Power MOSFET

STB7N52K3, STD7N52K3
STF7N52K3, STP7N52K3
N-channel 525 V, 0.84 Ω, 6.2 A, D²PAK, DPAK, TO-220FP, TO-220
SuperMESH3™ Power MOSFET
Features
Type
V_DSS
R_DS(on)
max
I_D
Pw
STB7N52K3
STD7N52K3
STF7N52K3
STP7N52K3
525 V
525 V
525 V
525 V
< 0.98 Ω
< 0.98 Ω
< 0.98 Ω
< 0.98 Ω
6.2 A
6.2 A
6.2 A ⁽¹⁾
6.2 A
90 W
90 W
25 W
90 W
1. Limited by package
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Improved diode reverse recovery
characteristics
■ Zener-protected
Application
■ Switching applications
Description
SuperMESH3™ is a new Power MOSFET
technology that is obtained via improvements
applied to STMicroelectronics’ SuperMESH™
technology combined with a new optimized
vertical structure. The resulting product has an
extremely low on resistance, superior dynamic
performance and high avalanche capability,
making it especially suitable for the most
demanding applications.
Table 1. Device summary
Order codes
Marking
STB7N52K3
STD7N52K3
STF7N52K3
STP7N52K3
7N52K3
7N52K3
7N52K3
7N52K3
3
1
D²PAK
3
1
DPAK
3
2
1
TO-220
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
D(2)
G(1)
S(3)
AM01476v1
Package
D²PAK
DPAK
TO-220FP
TO-220
Packaging
Tape and reel
Tape and reel
Tube
Tube
September 2009
Doc ID 14896 Rev 2
1/18
www.st.com
18