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| STB7N52K3_09 Datasheet, PDF (4/18 Pages) STMicroelectronics – N-channel 525 V, 0.84 OHM, 6.2 A, D2PAK, DPAK, TO-220FP, TO-220 SuperMESH3 Power MOSFET | |||
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Electrical characteristics
STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4.
Symbol
On /off states
Parameter
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on
Zero gate voltage
VDS = Max rating
drain current (VGS = 0) VDS = Max rating, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
Gate threshold voltage VDS = VGS, ID = 50 µA
Static drain-source on
resistance
VGS = 10 V, ID = 3.1 A
Min. Typ. Max. Unit
525
V
1 µA
50 µA
± 10 µA
3 3.75 4.5 V
0.84 0.98 â¦
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
737
pF
-
110
- pF
10
pF
Co(tr)(1)
Co(er)(2)
Equivalent
capacitance time
related
Equivalent
capacitance energy
related
VDS = 0 to 520 V, VGS = 0
-
198
- pF
-
126
- pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
4
-
â¦
Qg
Total gate charge
VDD = 420 V, ID = 6 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 20)
34
nC
-
4.4
- nC
15
nC
1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS
2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as
Coss when VDS increases from 0 to 80% VDSS
4/18
Doc ID 14896 Rev 2
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