STB45N65M5 Datasheet, PDF (8/20 Pages) STMicroelectronics – N-channel 650 V, 0.067 ohm typ., 35 A MDmesh V Power MOSFET

Electrical characteristics
STB45N65M5, STF45N65M5, STP45N65M5
Figure 14. Drain-source diode forward
characteristics
VSD
(V)
TJ=-50°C
1.2
AM05461v1
1.0
0.8
0.6
TJ=150°C
0.4
0.2
TJ=25°C
0
0 10 20 30 40 50 ISD(A)
Figure 16. Switching losses vs. gate
resistance ⁽¹⁾
E
(μJ)
ID=23A
600 _VDD=400V
VGS=10V
500
Eon
AM13086v1
400
Eoff
300
200
100
0
0
10
20
30
40
1. Eon including reverse recovery of a SiC diode
RG(Ω)
Figure 15. Normalized V_DS vs. temperature
VDS
(norm)
1.08
1.06
ID = 1mA
AM10399v1
1.04
1.02
1.00
0.98
0.96
0.94
0.92
-50 -25 0
25 50 75 100 TJ(°C)
8/20
DocID022854 Rev 4