STB45N65M5 Datasheet, PDF (5/20 Pages) STMicroelectronics – N-channel 650 V, 0.067 ohm typ., 35 A MDmesh V Power MOSFET

STB45N65M5, STF45N65M5, STP45N65M5
Electrical characteristics
Symbol
Parameter
t_d (v)
t_r (v)
t_f (i)
t_c(off)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
Table 7. Switching times
Test conditions
V_DD = 400 V, I_D = 23 A,
R_G = 4.7 Ω, V_GS = 10 V
(see Figure 19 and
Figure 22)
Min. Typ. Max Unit
79.5
ns
11
ns
-
-
9.3
ns
16
ns
Symbol
Table 8. Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
I_SD Source-drain current
I_SDM ⁽¹⁾ Source-drain current (pulsed)
-
V_SD ⁽²⁾ Forward on voltage
I_SD = 35 A, V_GS = 0
-
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 35 A, di/dt = 100 A/µs
-
V_DD = 100 V (see Figure 19)
t_rr
Reverse recovery time
I_SD = 35 A, di/dt = 100 A/µs
Q_rr Reverse recovery charge
V_DD = 100 V, T_j = 150 °C
-
I_RRM Reverse recovery current (see Figure 19)
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
35 A
140 A
1.5 V
392
ns
7.4
µC
38
A
468
ns
9.7
µC
42
A
DocID022854 Rev 4
5/20