STB45N65M5 Datasheet, PDF (7/20 Pages) STMicroelectronics – N-channel 650 V, 0.067 ohm typ., 35 A MDmesh V Power MOSFET

STB45N65M5, STF45N65M5, STP45N65M5
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage
VGS
(V) _VDS
12
VDD=520V
ID=17.5A
AM13082v1
VDS
(V)
500
10
400
8
300
6
200
4
2
100
Figure 9. Static drain-source on-resistance
RDS(on)
(Ω)
0.071
VGS=10V
AM13083v1
0.069
0.067
0.065
0.063
0
0
0 20 40 60 80 100 Qg(nC)
0.061
0
5 10 15 20 25 ID(A)
Figure 10. Capacitance variations
C
(pF)
AM13084v1
10000
Ciss
1000
100
10
1
0.1
1
Coss
Crss
10
100 VDS(V)
Figure 11. Output capacitance stored energy
Eoss (µJ)
AM13085v1
16
14
12
10
8
6
4
2
0
0 100 200 300 400 500 600 VDS(V)
Figure 12. Normalized gate threshold voltage
vs. temperature
VGS(th)
(norm)
1.10
ID=250µA
AM05459v2
1.00
0.90
0.80
0.70
-50 -25 0 25 50 75 100 TJ(°C)
Figure 13. Normalized on resistance vs.
temperature
RDS(on)
(norm)
2.1
1.9
VGS=10V
ID=17.5V
AM05460v2
1.7
1.5
1.3
1.1
0.9
0.7
0.5
-50 -25 0
25 50 75 100 TJ(°C)
DocID022854 Rev 4
7/20