STB45N65M5 Datasheet, PDF (3/20 Pages) STMicroelectronics – N-channel 650 V, 0.067 ohm typ., 35 A MDmesh V Power MOSFET

STB45N65M5, STF45N65M5, STP45N65M5
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
D²PAK
TO-220
TO-220FP
V_GS Gate-source voltage
I_D Drain current (continuous) at T_C = 25 °C
I_D Drain current (continuous) at T_C = 100 °C
I_DM ⁽¹⁾ Drain current (pulsed)
P_TOT Total dissipation at T_C = 25 °C
dv/dt ⁽²⁾ Peak diode recovery voltage slope
dv/dt ⁽³⁾ MOSFET dv/dt ruggedness
V_ISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
T_stg Storage temperature
T_j Max. operating junction temperature
1. Limited by maximum junction temperature.
2. I_SD ≤ 35 A, di/dt ≤ 400 A/µs, V_DS(Peak) < V_(BR)DSS, V_DD = 400 V
3. V_DS ≤ 480 V
± 25
35
35 ⁽¹⁾
22
22 ⁽¹⁾
140
140 ⁽¹⁾
210
40
15
50
2500
- 55 to 150
150
Unit
V
A
A
A
W
V/ns
V/ns
V
°C
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
D²PAK TO-220FP TO-220
R_thj-case
R_thj-pcb(1)
Thermal resistance junction-case max
Thermal resistance junction-pcb max
R_thj-amb Thermal resistance junction-ambient max
1. When mounted on 1 inch² FR-4, 2 Oz copper board.
0.60
30
3.13
0.60
62.5
°C/W
°C/W
°C/W
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
I_AR
Avalanche current, repetetive or not repetetive
(pulse width limited by T_jmax )
9
A
E_AS
Single pulse avalanche energy (starting t_j=25°C,
I_d= I_AR; V_dd=50)
810
mJ
DocID022854 Rev 4
3/20