STB120N4F6 Datasheet, PDF (8/18 Pages) STMicroelectronics – N-channel 40 V, 3.5 mΩ , 80 A, DPAK, D²PAK STripFET™ VI DeepGATE™ Power MOSFET

Test circuits
3
Test circuits
STB120N4F6, STD120N4F6
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
VDD
VD
VGS
RG
PW
RL
2200
μF
D.U.T.
3.3
μF _VDD
12V
47kΩ
1kΩ
100nF
Vi=20V=VGMAX
2200
μF
IG=CONST
2.7kΩ
100Ω
D.U.T.
VG
47kΩ
PW
AM01468v1
1kΩ
AM01469v1
Figure 15. Test circuit for inductive load
Figure 16. Unclamped Inductive load test
switching and diode recovery times
circuit
G
25 Ω
A
D
D.U.T.
S
B
AA
FAST
DIODE
L=100μH
B
3.3
B
μF
D
G
RG
S
1000
μF
VDD
Vi
L
VD
2200
3.3
μF
μF
VDD
ID
D.U.T.
Pw
AM01470v1
Figure 17. Unclamped inductive waveform
Figure 18. Switching time waveform
AM01471v1
V(BR)DSS
VD
ton
tdon
tr
toff
tdoff tf
VDD
IDM
ID
0
VDD
90%
10% VDS
90%
VGS
90%
10%
AM01472v1
0
10%
AM01473v1
8/18
Doc ID 17042 Rev 5