STB120N4F6 Datasheet, PDF (6/18 Pages) STMicroelectronics – N-channel 40 V, 3.5 mΩ , 80 A, DPAK, D²PAK STripFET™ VI DeepGATE™ Power MOSFET

Electrical characteristics
STB120N4F6, STD120N4F6
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area
Figure 3.
ID
(A)
100
OpLeirm^aittieodn ^{binytmhisaxarReDaSi(son)}
10
Tj=175°C
Tc=25°C
Single pulse
AM08627v1
100µs
1ms
10ms
Thermal impedance
1
0.1
0.1
1
10
VDS(V)
Figure 4. Output characteristics
ID (A)
350
300
250
VGS=10V
Figure 5.
AM08628v1
ID
(A)
300
Transfer characteristics
VDS=2V
6V
200
AM08629v1
200
150
5V
100
50
4V
0
0 1 2 3 4 5 6 7 8 VDS(V)
150
100
50
0
0
1
2 34
5 VGS(V)
Figure 6. Normalized B_VDSS vs temperature Figure 7. Static drain-source on resistance
BVDSS
(norm)
1.15
AM08630v1
RDS(on)
(mΩ)
4.5
VGS=10V
AM08631v1
1.10
1.05
4.0
1.00
3.5
0.95
0.90
0.85
0.80
-75 -25 25 75 125 175 TJ(°C)
3.0
2.5
2.0
20
40
60
80
ID(A)
6/18
Doc ID 17042 Rev 5