English
Language : 

STB120N4F6 Datasheet, PDF (5/18 Pages) STMicroelectronics – N-channel 40 V, 3.5 mΩ , 80 A, DPAK, D²PAK STripFET™ VI DeepGATE™ Power MOSFET
◁
STB120N4F6, STD120N4F6
Electrical characteristics
Table 7. Switching on/off (inductive load)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 20 V, ID = 40 A,
20
-
70
RG = 4.7 Ω, VGS = 10 V
(see Figure 15)
40
-
20
ns
-
ns
ns
-
ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 40 A, VGS = 0
ISD = 80 A,
di/dt = 100 A/µs,
VDD = 30 V
(see Figure 17)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
80 A
-
320 A
-
1.1 V
40
ns
- 56
nC
2.8
A
Doc ID 17042 Rev 5
5/18
 ▷