STB120N4F6 Datasheet, PDF (7/18 Pages) STMicroelectronics – N-channel 40 V, 3.5 mΩ , 80 A, DPAK, D²PAK STripFET™ VI DeepGATE™ Power MOSFET

STB120N4F6, STD120N4F6
Electrical characteristics
Figure 8.
VGS
(V)
10
Gate charge vs gate-source voltage Figure 9. Capacitance variations
AM08632v1
C
(pF)
VDD=20V
ID=80A
8
1000
6
4
100
AM08633v1
Ciss
Coss
Crss
2
0
0 10 20 30 40 50 60 70 Qg(nC)
10
0.1
1
10
VDS(V)
Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs
vs temperature
temperature
VGS(th)
(norm)
1.2
AM08634v1
RDS(on)
(norm)
2.0
VGS=10V
ID=40A
AM08635v1
1.0
1.5
0.8
1.0
0.6
0.4
0.5
0.2
-75 -25 25 75 125 175 TJ(°C)
Figure 12. Source-drain diode forward
characteristics
VSD
(V)
1.0
TJ=-55°C
AM08636v1
0.9
0
-75 -25 25 75 125 175 TJ(°C)
0.8
TJ=25°C
0.7
0.6
TJ=175°C
0.5
0.4
10 20 30 40 50 60 70 80 ISD(A)
Doc ID 17042 Rev 5
7/18