STB10N95K5 Datasheet, PDF (8/22 Pages) STMicroelectronics – Switching applications

Electrical characteristics
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
Figure 14. Normalized gate threshold voltage vs
temperature
VGS(th)
(norm)
1.2
ID=100µA
AM16142v1
1
0.8
0.6
0.4
0.2
0
-100 -50 0 50 100 150 TJ(°C)
Figure 16. Normalized V_DS vs temperature
VDS
(norm)
1.1
ID=1mA
AM16145v1
1.05
1
0.95
0.9
0.85
-100 -50 0 50 100 150 TJ(°C)
Figure 18. Maximum avalanche energy vs
starting T_J
EAS
(mJ)
AM16146v1
120
ID=2.5 A
VDD=50 V
100
80
60
40
20
0
0
25 50 75 100 125 TJ(°C)
Figure 15. Normalized on-resistance vs
temperature
RDS(on)
(norm)
2.5
ID=4A
VGS=10V
AM16143v1
2
1.5
1
0.5
0
-100 -50 0 50 100 150 TJ(°C)
Figure 17. Source-drain diode forward
characteristics
VSD(V)
TJ=-50°C
AM16144v1
0.9
TJ=25°C
0.8
0.7
TJ=150°C
0.6
0.5
2
3
4
5
6
7 ISD(A)
8/22
DocID024850 Rev 3