STB10N95K5 Datasheet, PDF (3/22 Pages) STMicroelectronics – Switching applications

STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
1
Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Value
Parameter
TO-220FP
D²PAK,
Unit
TO-220, TO-247
V_GS
I_D
I_D
(2)
I_DM
P_TOT
I_AR
Gate- source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Max current during repetitive or single
pulse avalanche
E_AS
(3)
dv/dt
(4)
dv/dt
Single pulse avalanche energy
(starting T_J = 25 °C, I_D=I_AS, V_DD= 50 V)
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
V_ISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1 s; T_C=25 °C)
T_j
Operating junction temperature
T_stg Storage temperature
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. I_SD ≤ 8 A, di/dt ≤ 100 A/μs, V_DS(peak) ≤ V_(BR)DSS.
4. V_SD ≤ 760 V
±30
(1)
8
8
(1)
5
5
32
30
130
2.5
122
4.5
50
2500
- 55 to 150
V
A
A
A
W
A
mJ
V/ns
V/ns
V
°C
Symbol
Table 3. Thermal data
Parameter
TO-220FP
Value
D²PAK
TO-220, ^Unit
TO-247
R_thj-case Thermal resistance junction-case max
R_thj-amb Thermal resistance junction-amb max
(1)
Rt_hj-pcb Thermal resistance junction-pcb max
1. When mounted on 1 inch² FR-4, 2 Oz copper board
4.2
62.5
0.96
62.5
30
°C/W
°C/W
°C/W
DocID024850 Rev 3
3/22
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