STB10N95K5 Datasheet, PDF (4/22 Pages) STMicroelectronics – Switching applications

Electrical characteristics
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
2
Electrical characteristics
(Tcase =25 °C unless otherwise specified)
Symbol
Parameter
Table 4. On /off states
Test conditions
Drain-source breakdown
V_{(BR)DSS voltage}
I_D = 1 mA, V_GS = 0
I_DSS
I_GSS
Zero gate voltage, V_GS = 0 ^VDS ^{= 950 V}
drain current
V_DS = 950 V, T_C=125 °C
Gate-body leakage
current
V_GS = ± 20 V; V_DS=0
V_GS(th)
R_DS(on)
Gate threshold voltage
Static drain-source on-
resistance
V_DS = V_GS, I_D = 100 μA
V_GS = 10 V, I_D = 4 A
Min. Typ. Max. Unit
950
V
1 μA
50 μA
±10 μA
3 4 5V
0.65 0.8 Ω
Symbol
Parameter
Table 5. Dynamic
Test conditions
Min. Typ. Max. Unit
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
- 630 - pF
- 50 - pF
V_DS =100 V, f=1 MHz, V_GS=0
- 0.6 - pF
(1)
C_o(tr)
(2)
C_o(er)
Equivalent capacitance time
related
Equivalent capacitance
V_GS = 0, V_DS = 0 to 760 V
energy related
- 77 - pF
- 28 - pF
R_G Intrinsic gate resistance
f = 1 MHz open drain
- 6.5 -
Ω
Q_g Total gate charge
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD = 760 V, I_D = 8 A
V_GS =10 V
(see Figure 20)
- 22 - nC
-
5
- nC
- 15 - nC
1. Time related is defined as a constant equivalent capacitance giving the same charging time as C_oss when
V_DS increases from 0 to 80% V_DSS
2. energy related is defined as a constant equivalent capacitance giving the same stored energy as C_oss
when V_DS increases from 0 to 80% V_DSS
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DocID024850 Rev 3