STB10N65K3 Datasheet, PDF (8/21 Pages) STMicroelectronics – Very low intrinsic capacitances

Electrical characteristics
STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3
Figure 14. Normalized gate threshold voltage vs
temperature
VGS(th)
(norm)
1.10
ID= 100 µA
AM03930v1
1.00
0.90
0.80
0.70
-50 -25 0 25 50 75 100 _{125 150} TJ(°C)
Figure 16. Source-drain diode forward
characteristics
VSD
(V)
0.9
TJ=-50°C
AM03932v1
0.8
TJ=25°C
0.7
0.6
TJ=150°C
0.5
0.4
0.3
0 1 2 3 4 5 6 7 8 ISD(A)
Figure 15. Maximum avalanche energy vs
temperature
EAS
(mJ)
220
200
180
160
140
120
100
80
60
40
20
0
0
ID=7.2 A
VDD=50 V
AM03933v1
20 40 60 80 100 120 140 TJ(°C)
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