STB10N65K3 Datasheet, PDF (3/21 Pages) STMicroelectronics – Very low intrinsic capacitances

STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol
Parameter
TO-220FP
I²PAKFP
D²PAK,
TO-220
V_DS
V_GS
I_D
I_D
I_DM ⁽¹⁾
P_TOT
I_AR
E_AS
dv/dt ⁽³⁾
Drain source voltage
Gate-source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Max current during repetitive or single pulse
avalanche (pulse width limited by T_JMAX)
Single pulse avalanche energy ⁽²⁾
Derating factor
Peak diode recovery voltage slope
650
± 30
10
6.3
40
35
150
7.2
212
0.28
1.2
12
ESD
Gate-source human body model
(R = 1.5 kΩ, C = 100 pF)
V_ISO
T_j
T_stg
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1 s; T_C=25 °C)
Operating junction temperature
Storage temperature
1. Pulse width limited by safe operating area.
2. Starting T_j = 25 °C, I_D = I_AR, V_DD = 50 V
3. I_SD ≤ 10 A, di/dt = 100 A/µs, V_Peak < V_(BR)DSS
2.8
2500
-55 to 150
Unit
V
V
A
A
A
W
A
mJ
W/°C
V/ns
kV
V
°C
°C
Table 3. Thermal data
Symbol
Parameter
Value
D²PAK
TO-220FP
I²PAKFP
TO-220
Unit
R_thj-case Thermal resistance junction-case max
R_thj-amb Thermal resistance junction-ambient max
R_thj-pcb Thermal resistance junction-pcb max
0.83
3.57
0.83 °C/W
62.5
°C/W
30
°C/W
DocID15732 Rev 4
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