STB10N65K3 Datasheet, PDF (4/21 Pages) STMicroelectronics – Very low intrinsic capacitances

Electrical characteristics
STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3
2
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Symbol
Parameter
Table 4. On /off states
Test conditions
V_(BR)DSS
Drain-source
breakdown voltage
I_D = 1 mA, V_GS = 0
I_DSS
I_GSS
V_GS(th)
R_DS(on)
Zero gate voltage
V_DS = 650 V
drain current (V_GS = 0) V_DS = 650 V, T_C=125 °C
Gate-body leakage
current (V_DS = 0)
V_GS = ± 20 V
Gate threshold voltage V_DS = V_GS, I_D = 100 µA
Static drain-source on-
resistance
V_GS = 10 V, I_D = 3.6 A
Min. Typ. Max. Unit
650
V
1 µA
50 µA
±10 µA
3
4.5 V
0.75 1 Ω
Symbol
Parameter
C_iss
C_oss
C_rss
C_{oss eq.}
R_G
Q_g
Q_gs
Q_gd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Intrinsic gate
resistance
Total gate charge
Gate-source charge
Gate-drain charge
Table 5. Dynamic
Test conditions
V_DS = 25 V, f = 1 MHz,
V_GS = 0
V_DS = 0 to 520 V, V_GS = 0
f=1 MHz, I_D=0
V_DD = 520 V, I_D = 7.2 A,
V_GS = 10 V
(see Figure 18)
Min.
-
-
Typ.
1180
125
Max. Unit
- pF
- pF
-
14
- pF
-
77
- pF
-
3
-
Ω
-
42
- nC
-
7.4
- nC
-
23
- nC
Table 6. Switching times
Symbol
Parameter
Test conditions
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
V_DD = 310 V, I_D = 3.5 A,
R_G = 4.7 Ω, V_GS = 10 V
(see Figure 17)
Min. Typ. Max Unit
- 14.5 - ns
- 14
- ns
- 44
- ns
- 35
- ns
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DocID15732 Rev 4