STB10N65K3 Datasheet, PDF (1/21 Pages) STMicroelectronics – Very low intrinsic capacitances

STB10N65K3, STF10N65K3,
STFI10N65K3, STP10N65K3
N-channel 650 V, 0.75 Ω typ., 10 A SuperMESH3™ Power MOSFETs
in D²PAK, TO-220FP, I²PAKFP and TO-220 packages
Datasheet - production data
Features
TAB
3
1
D²PAK
3
2
1
TO-220FP
TAB
I²PAKFP (TO-281)
3
2
1
TO-220
Figure 1. Internal schematic diagram
'7$%
Order codes
STB10N65K3
STF10N65K3
STFI10N65K3
STP10N65K3
V_DS R_DS(on) max
I_D P_TOT
150 W
650 V
1Ω
10 A 35 W
150 W
• 100% avalanche tested
• Extremely low on-resistance R_DS(on)
• Gate charge minimized
• Very low intrinsic capacitances
• Improved diode reverse recovery
characteristics
• Zener-protected
*
6
AM01476v1
Applications
• Switching applications
Description
These SuperMESH3™ Power MOSFETs are the
result of improvements applied to
STMicroelectronics’ SuperMESH™ technology,
combined with a new optimized vertical structure.
These devices boast an extremely low on-
resistance, superior dynamic performance and
high avalanche capability, rendering them suitable
for the most demanding applications.
Order codes
STB10N65K3
STF10N65K3
STFI10N65K3
STP10N65K3
Table 1. Device summary
Marking
Package
D²PAK
10N65K3
TO-220FP
I²PAKFP (TO-281)
TO-220
Packaging
Tape and reel
Tube
August 2013
This is information on a product in full production.
DocID15732 Rev 4
1/21
www.st.com