PD57018-E Datasheet, PDF (8/28 Pages) STMicroelectronics – RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Typical performance
4
Typical performance
PD57018-E, PD57018S-E
Figure 3. Capacitance vs drain voltage
Figure 4. Drain current vs gate voltage
100
Ciss
Coss
10
Crss
1
0.1
0
10
20
30
40
50
VDS, DRAIN-SOURCE VOLTAGE (V)
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
2.5
VDS = 28 V
TCASE = 25°C
3
3.5
4
4.5
5
Vgs, GATE-SOURCE VOLTAGE (V)
Figure 5.
1.02
Gate-source voltage vs case
temperature
Figure 6. Safe operating area
10
1.01
ID = .75A
ID = 1A
1
0.99
ID =1.25A
ID = 1.5 A
ID = 1.75A
ID = 2A
0.98
-25
VDS = 10 V
0
25
50
75
Tcase, CASE TEMPERATURE (°C)
100
Tc = 25 ºC
1
Tc = 70 ºC
Tc = 100 ºC
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
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