PD57018-E Datasheet, PDF (12/28 Pages) STMicroelectronics – RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Typical performance
PD57018S
Figure 19. Output power vs
bias current
PD57018-E, PD57018S-E
Figure 20. Efficiency vs bias current
20
925 MHz
19
945 MHz
960 MHz
18
17
16
0
Pin = .3 W
Vdd =28 V
50 100 150 200 250 300 350 400
Idq, BIAS CURRENT (mA)
60
55
945 MHz
960 MHz
925 MHz
50
45
40
0
Pin = .3 W
Vdd = 28 V
50 100 150 200 250 300 350 400
Idq, BIAS CURRENT (mA)
Figure 21. Output power vs
drain voltage
Figure 22. Output power vs
gate voltage
25
20
15
10
5
0
15
925 MHz
945 MHz
960 MHz
Pin = .3 W
Idq = 100 mA
20
25
30
35
VDS, DRAIN-SOURCE VOLTAGE (V)
25
925 MHz
20
945 MHz
960 MHz
15
10
VDD = 28 V
5
Pin = .3 W
0
0
0.5
1
1.5
2
2.5
3
3.5
VGS, GATE BIAS VOLTAGE (V)
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