PD57018-E Datasheet, PDF (5/28 Pages) STMicroelectronics – RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

PD57018-E, PD57018S-E
1
Electrical data
1.1
Maximum ratings
Table 2. Absolute maximum ratings (T_CASE = 25°C)
Symbol
Parameter
V_(BR)DSS
V_GS
I_D
P_DISS
T_J
T_STG
Drain-source voltage
Gate-source voltage
Drain current
Power dissipation (@ T_C = 70°C)
Max. operating junction temperature
Storage temperature
1.2
Thermal data
Table 3. Thermal data
Symbol
Parameter
R_thJC
Junction - case thermal resistance
Electrical data
Value
Unit
65
V
± 20
V
2.5
A
31.7
W
165
°C
-65 to +150
°C
Value
3.0
Unit
°C/W
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