PD57018-E Datasheet, PDF(6/28 Page) STMicroelectronics – RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

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PD57018-E Datasheet, PDF (6/28 Pages) STMicroelectronics – RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

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Electrical characteristics

PD57018-E, PD57018S-E

2.1

TCASE = +25 oC

Static

Table 4. Static

Symbol

V(BR)DSS

IDSS

IGSS

VGS(Q)

RDS(ON)

gFS

CISS

COSS

CRSS

VGS = 0 V

VGS = 20 V

VDS = 28 V

VGS = 10 V

VDS = 10 V

VGS = 0 V

Test conditions

IDS = 10 mA

VDS = 28 V

VDS = 0 V

ID = 100 mA

ID = 1.25 A

ID = 1 A

VDS = 28 V

f = 1 MHz

Min Typ Max Unit

1 ÂµA

2.0

4.0 V

0.76 â¦

mho

34.5

1.3

2.2

Dynamic

Table 5. Dynamic

Symbol

Test conditions

POUT VDD = 28 V, IDQ = 100 mA

f = 945 MHz

GPS VDD = 28 V, IDQ = 100 mA, POUT = 18 W, f = 945 MHz

VDD = 28 V, IDQ = 100 mA, POUT = 18 W, f = 945 MHz

Load VDD = 28 V, IDQ = 100 mA, POUT = 18 W, f = 945 MHz

mismatch All phase angles

Min Typ Max Unit

14 16.5

50 53

10:1

VSWR

6/28

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