PD57006-E Datasheet, PDF (8/22 Pages) STMicroelectronics – RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Typical performance
Figure 9. Output power vs drain voltage
PD57006-E, PD57006S-E
Figure 10. Drain efficiency vs bias current
10
8
925 MHz
6
945 MHz
960 MHz
60
945 MHz
50
925 MHz
40
960 MHz
4
30
Vdd=28V
2
Vdd=28V
20
Pin= 23.6 dBm
Pin= 23.6 dBm
0
10
0
100
200
300
400
0
100
200
300
400
IDQ, BIAS CURRENT (mA)
IDQ, BIAS CURRENT (mA)
Figure 11. Output power vs supply voltage Figure 12. Drain efficiency vs supply voltage
8
945 MHz
7
6
925 MHz
5
960 MHz
4
3
2
Idq=70 mA
Pin= 23.6 dBm
1
10 12 14 16 18 20 22 24 26 28 30
VDD, SUPPLY VOLTAGE (V)
60
925 MHz
50
40
960 MHz
945 MHz
30
20
Idq= 70 mA
Pin= 23.6 dBm
10
10 12 14 16 18 20 22 24 26 28 30
VDD, SUPPLY VOLTAGE (V)
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