PD57006-E Datasheet, PDF (6/22 Pages) STMicroelectronics – RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Typical performance
4
Typical performance
PD57006-E, PD57006S-E
Figure 2. Capacitance vs supply voltage
Figure 3. Drain current vs
gate source voltage
100
Ciss
10
Coss
1
f=1MHz
0.1
0
4
Crss
8
12
16
20
24
28
VDD, DRAIN VOLTAGE (V)
Figure 4. Gate-source voltage vs
case temperature
1.06
1.04
1.02
1
0.98
0.96
0.94
0.92
-25
Id=1.5 A
Id=1 A
Id=.6 A
Id=.2 A
Vds=10 V
Id=.05 A
0
25
50
75
100
Tc, CASE TEMPERATURE (°C)
6/22