PD57006-E Datasheet, PDF (11/22 Pages) STMicroelectronics – RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

PD57006-E, PD57006S-E
Typical performance
Figure 20. Output power vs supply voltage Figure 21. Drain efficiency vs supply voltage
8
7
925 MHz
6
945 MHz
5
960 MHz
4
3
Idq=70 mA
2
Pin= 22.7 dBm
1
10 12 14 16 18 20 22 24 26 28 30
VDD, SUPPLY VOLTAGE (V)
Figure 22. Output power vs
gate-source voltage
60
960 MHz
50
40
945 MHz
925 MHz
30
20
Idq=70 mA
Pin= 22.7 dBm
10
10 12 14 16 18 20 22 24 26 28 30
VDD, SUPPLY VOLTAGE (V)
9
8
925 MHz
7
945 MHz
6
960 MHz
5
4
3
2
1
Vdd=28V
Pin= 22.7 dBm
0
0
1
2
3
4
VGS, GATE-SOURCE VOLTAGE (V)
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