PD57006-E Datasheet, PDF (10/22 Pages) STMicroelectronics – RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Typical performance
Figure 16. Power gain vs output power
PD57006-E, PD57006S-E
Figure 17. Drain efficiency vs output power
18
925 MHz
16
14
945 MHz
960 MHz
12
10
8
Vdd=28V
6
Idq=70mA
4
0 123456789
Pout, OUTPUT POWER (W)
60
945 MHz
50
960 MHz
925 MHz
40
30
20
Vdd=28V
Idq=70mA
10
0123456789
Pout, OUTPUT POWER (W)
Figure 18. Output power vs bias current
Figure 19. Drain efficiency vs bias current
10
60
8
925 MHz
50
6
40
960 MHz
945 MHz
4
30
2
Vdd=28V
20
Pin= 22.7 dBm
0
10
0
100
200
300
400
0
IDQ, BIAS CURRENT (mA)
945 MHz
925 MHz
960 MHz
Vdd=28V
Pin= 22.7 dBm
100
200
300
400
IDQ, BIAS CURRENT (mA)
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