STE145N65M5 Datasheet, PDF (7/13 Pages) STMicroelectronics – Low gate charge and input capacitance

STE145N65M5
Figure 8: Capacitance variations
C
(pF)
100000
Ciss
10000
1000
100
f=1 MHz
Coss
10
1
0.1
1
Crss
10
100 VDS(V)
Electrical characteristics
Figure 9: Normalized gate threshold voltage
vs temperature
Figure 10: Normalized on-resistance vs
temperature
Figure 11: Normalized V(BR)DSS vs temperature
Figure 12: Output capacitance stored energy
Figure 13: Switching losses vs gate
resistance
The previous figure E_on includes reverse recovery of a SiC diode.
DocID025538 Rev 2
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